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Proceedings Paper

Advanced (Hg,Cd)Te Photodiodes For Infrared Applications
Author(s): Toivo Koehler; Alice M. Chiang
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Paper Abstract

This paper discusses four types of (Hg,Cd)Te photodiodes developed recently at the Honeywell Radiation Center: 1. 2.06μm (Hg,Cd)Te avalanche photodiodes 2. 10.64m (Hg,Cd)Te photodiodes 3. High D* 10.6μm photodiodes with RoA products of 0.7 ohm-cm2 4. Thermoelectrically cooled 10.64m photomixers The 2.064m avalanche photodiodes were developed for the Q-switched Ho:YLF laser. The structures exhibited avalanche gains from 9 to 36. The 10.6μm photodiodes have average quantum efficiencies of 30 percent. This program has produced 5 element linear arrays with 250μm x 250μm elements, 17μm spacing and 350 MHz bandwidth. RoA products as high as 0.7 ohm-cm2 have also recently become possible in 10.64m (Hg,Cd)Te photodiodes. 10.6μm diodes operating at 170°K with a 6-stage thermoelectric cooler have high quantum efficiency (20%) and moderate D* and are suitable for direct detection or heterodyne applications requiring 100 MHz bandwidth.

Paper Details

Date Published: 20 January 1976
PDF: 10 pages
Proc. SPIE 0062, Modern Utilization of Infrared Technology I, (20 January 1976); doi: 10.1117/12.954431
Show Author Affiliations
Toivo Koehler, Honeywell Radiation Center (United States)
Alice M. Chiang, Honeywell Radiation Center (United States)

Published in SPIE Proceedings Vol. 0062:
Modern Utilization of Infrared Technology I
Irving J. Spiro, Editor(s)

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