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Proceedings Paper

Image Characteristics Of A Positive Photoresist On Semiconductor Surfaces And Their Impact On Device Yield
Author(s): David J. Elliott; Michael T. Nash
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Paper Abstract

Photoresist processing has been shown to contribute significantly to device yields in integrated circuit manufacturing. Primary factors in photo-resist processing are dimensional reproduction of photomask geometries, sensitivity to environmental and process conditions, and etch protection afforded by the photoresist. These factors are discussed relative to device yield. A series of scanning electron micrographs are presented which attempt to show the importance of adequate photoresist protection in integrated circuit processing. The unique capabilities of a positive photoresist are related to the factors which have the greatest impact on yield: dimensional reproducibility or fidelity, etch protection and tolerance to processing and environmental factors. The role of photoresist processing and its impact upon device yield has been clearly established in integrated circuit manufacturing. The imaging characteristics of a photoresist material plays a vital role in maintaining and improving device yields. Selection of a photo-resist material should, therefore be based upon imaging properties that fulfill the needs for improved device quality and yield. These properties are defined below:

Paper Details

Date Published: 1 March 1974
PDF: 7 pages
Proc. SPIE 0055, Technological Advances in Micro and Submicro Photofabrication Imagery, (1 March 1974); doi: 10.1117/12.954240
Show Author Affiliations
David J. Elliott, Shipley Company (United States)
Michael T. Nash, Shipley Company (United States)

Published in SPIE Proceedings Vol. 0055:
Technological Advances in Micro and Submicro Photofabrication Imagery
William Converse; J. M. Graf, Editor(s)

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