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Proceedings Paper

Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films
Author(s): O. V. Iaseniuc
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Paper Abstract

The modifications of optical parameters (optical band gap Eg, absorption coefficient α, refractive index n) under light irradiation by He-Ne laser of the amorphous thin films with different amount of Sn were measured and calculated. In the present work the transmission spectra of bulk and thin films of [(As2S3)0.5:(As2Se3)0.5]1-x:Snx (x=0; 1; 2 at.%) in the visible and middle infrared (IR) regions were studied. The red shift of the fundamental absorption edge under light exposure was observed, and the values of the optical band gap Eg opt from the graphics in Tauc coordinates (α hν)1/2=A(hν - Eg) were obtained. The dispersion of the refractive index was examined. The relaxation of the relative optical transmission T/T0=f(t) under the light exposure (λ=633nm and λ=543nm) for amorphous [(As2S3)0.5:(As2Se3)0.5]1-x:Snx thin films also was investigated. The relaxation curves of photodarkening under light irradiation were processing using the stretched exponential presentation of the data: T(t)/T(0) = A0+Aexp[-(t-t0)/τ] (1-β), where t is the exposure time, τ is the apparent time constant, A characterizes the exponent amplitude, t0 and A0 are the initial coordinates, and β is the dispersion parameter (0<β<1).

Paper Details

Date Published: 1 November 2012
PDF: 7 pages
Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84110K (1 November 2012); doi: 10.1117/12.954163
Show Author Affiliations
O. V. Iaseniuc, Institute of Applied Physics (Moldova)

Published in SPIE Proceedings Vol. 8411:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
Paul Schiopu; Razvan Tamas, Editor(s)

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