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Proceedings Paper

Microstructure Fabrication with Implanted Etch Barriers
Author(s): Tsing Chen
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Paper Abstract

A novel etch masking process for orientation dependent chemical etching of silicon is presented. This process is based as well on the conversion of a surface relief pattern into a surface concentration pattern using ion implantation technique as on the differential etch rate of the heavily doped p+ silicon. The ion implantation process allows direct transfer of the photoresist pattern to the substrate. The improved etch control enables wet chemical etching of submicrometer structures. The different behaviour of the heavily doped p+ silicon versus various etchants renders possible to obtain patterned image reversal.

Paper Details

Date Published: 25 July 1989
PDF: 3 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953164
Show Author Affiliations
Tsing Chen, LGZ Landis & Gyr Zug Corporation (Switzerland)

Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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