Share Email Print

Proceedings Paper

Progress in I-line Stepper Technology for Half-Micron
Author(s): James Greeneich; Steve Wittekoek; Barton Katz; Martin van den Brink
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

I-line lithography offers the capability to achieve half-micron integrated circuit design rules. Such design rules require very good optical performance matched to resist process technology. Overlay performance at these design rules is also critical wit capability needed in the 100-150 nm region. Resolution and usable depth of focus (UDoF) need to be evaluated concurrently and are influenced by the lens design (wavelength, NA, focal plane deviation) as well as the resist processing technology. A simple model is presented to describe these inter-relationships. Experimental comparison of UDoF performance from 0.7 μm to 0.5 μm resolution is presented for several resist processes showing UDoF performance of greater than one micron for half-micron features. Half-micron capability on IC film stacks and topography with good UDoF is also demonstrated. The PAS 2500 alignment and positioning systems are compatible with the overlay requirements for half-micron design rules. Improved performance of the key subsystems is reported; notably the reproducibility of the phase grating alignment system and the positioning accuracy of the three axis XY stage system. The resulting improved single machine overlay from 37 steppers is 120 nm 3 σ. Improved machine to machine matching will be reported based upon the reduced single machine overlay, smaller lens distortions and an improved matching procedure. The distortion data of 19 Zeiss 58 lenses will be reported in terms of the difference between all possible pairs of lenses. Multiple machine overlay data will be given and the improvements from lens selection demonstrated.

Paper Details

Date Published: 25 July 1989
PDF: 16 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953147
Show Author Affiliations
James Greeneich, ASM Lithography Inc. (United States)
Steve Wittekoek, ASM Lithography BV (The Netherlands)
Barton Katz, ASM Lithography Inc. (United States)
Martin van den Brink, ASM Lithography BV (The Netherlands)

Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?