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Proceedings Paper

A Model for End Point Detect During the Development of Photoresists
Author(s): Michael P. C. Watts; Stephen Williams; Patrick McCarthy; Michael Tsai; David Eimerl
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Paper Abstract

End point detect during photoresist develop has the potential to reduce the variation of line width caused by variations in coat, bake, develop, wafer reflectivity, air temperature etc. This paper will describe a model for the reflectivity signals used to detect the end point during develop. Examples will be given of signal variation caused by a number of different process variations.

Paper Details

Date Published: 19 July 1989
PDF: 14 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953105
Show Author Affiliations
Michael P. C. Watts, Semiconductor Systems (United States)
Stephen Williams, Semiconductor Systems (United States)
Patrick McCarthy, Semiconductor Systems (United States)
Michael Tsai, Semiconductor Systems (United States)
David Eimerl, Consultant (United States)

Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)

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