Proceedings Paper
Contact Window Metrology Using The Photocleave Technique| Format | Member Price | Non-Member Price |
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Paper Abstract
Application of the nondestructive Photocleave Technique for determining the shape and size of sub-micron contact windows defined in photoresist is described. Stepper-based printing in positive photoresist is assumed. Following conventional exposure of the contact windows in pass 1, the stepper is programmed to immediately execute pass 2, with an appropriate pass-shift, to expose a linear feature that sections the latent images of the contact windows. After development, a fast turn around SEM is used to determine the contact window parameters with an enhanced level of certainty as a result of using the Photocleave Technique.
Paper Details
Date Published: 19 July 1989
PDF: 9 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953080
Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)
PDF: 9 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953080
Show Author Affiliations
T. Yang, AT&T Bell Laboratories, Inc. (United States)
D. E. Schrope, AT&T Bell Laboratories, Inc. (United States)
D. E. Schrope, AT&T Bell Laboratories, Inc. (United States)
B. J. Dardzinski, AT&T Bell Laboratories, Inc. (United States)
J. D. Cuthbert, AT&T Bell Laboratories, Inc. (United States)
J. D. Cuthbert, AT&T Bell Laboratories, Inc. (United States)
Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)
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