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Proceedings Paper

Electron Beam Metrology For Integrated Circuit Structures: Predictions And Experiments
Author(s): Sylvester Johnson; Jo A. McMillan; Noel C. MacDonald
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Paper Abstract

A Monte Carlo program named SEEL (Simulation of Electron Energy Loss) was developed to simulate electron trajectories in arbitrary line geometries. Submicron scale electronic structures were fabricated in order to compare the simulation with experimental results. SEEL was used to determine the radial exposure distribution for electron energy dissipated in resist during electron beam lithography. A companion program called PRESTO (PRoximity Effect Simulation TOO was developed to predict the exposure of submicron scale patterns. Exposures were made for the purpose of comparing the experimental patterns with simulations.

Paper Details

Date Published: 19 July 1989
PDF: 7 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953073
Show Author Affiliations
Sylvester Johnson, Cornell University (United States)
Jo A. McMillan, Cornell University (United States)
Noel C. MacDonald, Cornell University (United States)

Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)

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