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Proceedings Paper

Positive Photoresist Development: A Multiple State Percolation Model
Author(s): Peter Trefonas III
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Paper Abstract

A 3-dimensional multiple state molecular-scale model is described for simulating the exposure and development of positive diazonaphthoquinone/novolac-type photoresist. Resist composition and properties of the individual components are specified; development proceeds through percolational approach. A second macro-scale simulator then uses the dose/response information generated by the molecular scale model to simulate exposure and development of resist profiles in three dimensions. Simulation results are presented to describe the effects of varying the PAC/resin ratio, resin dissolution rate, and the number of photoactive groups per molecule in terms of lithographically relevant properties such as contrast, energy reaction order and resist profile appearance.

Paper Details

Date Published: 30 January 1989
PDF: 11 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953061
Show Author Affiliations
Peter Trefonas III, Aspect Systems Corporation (United States)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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