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Proceedings Paper

Use Of Plasmask Resist (Desire Process) On Metal II In IC Device Fabrication
Author(s): J. P. Chollet; F. Debaene
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Paper Abstract

As far as double metal technology is concerned the performances of multilayer resist processes are well known. In an industrial context the results provided by steppers are now guaranteed : focus, resolution alignment accuracy, even for grainy reflective substrates with severe topographies. Through the development of new processes it is now possible to industrially use single layer resist systems. Using the DESIRE (Diffusion Enhanced Silylation Resist Exposed) process is a good example of this, not only with regard to lithography but also to etching, electrical results and C.D. stability. For each of the above, the same results will be shown as for multilayer processes. We will briefly describe the DESIRE process as well as the equipment. The C.D. evaluation and resolution depending on resist thickness, exposure and soft bake will be presented. The behaviour of the resist during an oxygen and chlorine plasma etching will be discussed. The yields on test strutures will be presented.

Paper Details

Date Published: 30 January 1989
PDF: 10 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953057
Show Author Affiliations
J. P. Chollet, CNET Meylan (France)
F. Debaene, CNET Meylan (France)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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