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Proceedings Paper

Materials For Photochemical Image Enhancement With 436, 365, Or 248 nm Radiation
Author(s): James R. Sheats
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Paper Abstract

The chemistry of Photochemical Image Enhancement with anthracene photooxiidation is described in detail, emphasizing materials properties needed to avoid reciprocity failure due to oxygen depletion. The application of new materials, including dianthrylethanes and methacrylate-siloxane graft copolymers, is described; these are capable of providing exposure times of less than 1 sec, with the possibility of further improvements. The performance characteristics of existing materials have been compared to those of CEL by use of a simple analytical formula. Data are also presented on behavior in the deep UV, with a view toward application as CEL and PIE materials for DUV lithography.

Paper Details

Date Published: 30 January 1989
PDF: 10 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953053
Show Author Affiliations
James R. Sheats, Hewlett Packard Laboratories (United States)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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