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Proceedings Paper

Dry Developable Plasma Polymerized Photo-Resist System For Curved Surface Fabrication
Author(s): Hitomi Yamada; Makoto Nakamura; Shinzo Morita; Shuzo Hattori; Norio Ishikawa; Masao Miyazaki; Hayato Katsuragi; Kiyoto Mori
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Paper Abstract

Dry-developable single layer resist process using plasma polymerized film was investigated. For the process, the selective fixation of Si-containing organic monomer to base polymer at the exposed part was applied. Plasma polymerized film was formed by an inductively coupled gas flow type reactor. Si-containing monomer was diffused to a base polymer in the sealed reactor under the pressure of several Torr at RT. The contrast of Si-containing monomer between the exposed and unexposed parts was attained by expelling the unreacted monomer at the unexposed part after pattering exposure. The pattern formation was performed through the process using SR as a pattering source. The 1-1.5um pattern was obtained by O2 RIE. An investigation about the diffusion level of Si-containing monomer was conducted by IR and ESCA depth-profile.

Paper Details

Date Published: 30 January 1989
PDF: 10 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953043
Show Author Affiliations
Hitomi Yamada, Nagoya Univ. (Japan)
Makoto Nakamura, Nagoya Univ. (Japan)
Shinzo Morita, Nagoya Univ. (Japan)
Shuzo Hattori, Nagoya Univ. (Japan)
Norio Ishikawa, Kanto Chemical Co., Inc. (Japan)
Masao Miyazaki, Kanto Chemical Co., Inc. (Japan)
Hayato Katsuragi, Kanto Chemical Co., Inc. (Japan)
Kiyoto Mori, Kanto Chemical Co., Inc. (Japan)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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