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Proceedings Paper

Dry Lithography with Deep-UV Exposure Using Silylated Resist Materials
Author(s): Chris Spence; Yosi Shacham-Diamand
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Paper Abstract

The silylation behavior of some positive resists has been investigated using 248nm KrF Excimer laser expo-sure. In particular we have studied novolac-based mid-UV (i-line) positive resists and also variants which use an image reversal scheme. Both types of resist were found to produce selectivities in etch rate of 10-15. The etch rate was slower in the exposed regions in the positive case, and slower in the flood-exposed areas in the image reversal schemes. We have compared our results to the mechanisms for silylation selectivity suggested in the literature and find them to be consistent with models that propose cross-linking as a diffusion inhibitor. The nature of the cross-linking however is not the same in all cases, and depends on the chemistry and processing parameters of the resist system.

Paper Details

Date Published: 30 January 1989
PDF: 13 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953032
Show Author Affiliations
Chris Spence, Electronics Research Laboratory (United States)
Yosi Shacham-Diamand, Electronics Research Laboratory (United States)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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