Proceedings Paper
Sub-half-micron Patterning Characteristics of Silicone-based Positive (SPP) and Negative (SNP) Resists in KrF Excimer Laser Lithography| Format | Member Price | Non-Member Price |
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Paper Abstract
The concept is attained that controlling of the dissolution rate ratio between completely exposed and unexposed resist areas is useful for obtaining steeper resist profiles and higher resolution when resists have high absorbance. Its usefulness is confirmed by experiments. Using 0.4 μm thick SPP with absorbance of 0.4, the linear relation between mask and resist pattern line widths is maintained to 0.40 μm line and space patterns. 0.36 μm line and space patterns with vertical walls are obtained in 0.4 μm thick SNP with absorbance of 1.2.
Paper Details
Date Published: 30 January 1989
PDF: 7 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953029
Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)
PDF: 7 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953029
Show Author Affiliations
Yoshio Kawai, NTT LSI Laboratories (Japan)
Akinobu Tanaka, NTT LSI Laboratories (Japan)
Yoshiharu Ozaki, NTT LSI Laboratories (Japan)
Akinobu Tanaka, NTT LSI Laboratories (Japan)
Yoshiharu Ozaki, NTT LSI Laboratories (Japan)
Kiichi Takamoto, NTT LSI Laboratories (Japan)
Akira Yoshikawa, NTT LSI Laboratories (Japan)
Akira Yoshikawa, NTT LSI Laboratories (Japan)
Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)
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