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Proceedings Paper

Mechanisms Of The Dissolution Inhibition Effect And Their Application To Designing Novel Deep-UV Resists
Author(s): Makoto Murata; Mitsunobu Koshiba; Yoshiyuki Harita
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Paper Abstract

The dissolution inhibition effect and alkaline solubility were investigated for naphthoquinone diazides like 1,2-naphthoquinone diazide (NQD), its 5-sulfonylchloride (NQD-C) and 5-sulfonyloxybenzene (DAM), and for other compounds like sulfonylchlorides, sulfonyl esters, sulfones and a ketone which do not contain a naphthoquinone diazide moiety. As a result, it has turned out that the dissolution inhibition effect does not depend on the specific structure; namely, the naphthoquinone diazide moiety itself, but largely on the alkaline solubility of the compounds added to a novolak resin. An XPS study for the films consisting of a novolak resin and a dissolution inhibitor indicates a formation of an inhibitor-rich protective thin layer on the film surface after immersion of the film in an alkaline developer. In this paper is proposed a new third dissolution inhibition mechanism in addition to the previously reported chemical crosslinking and dipolar interaction; i.e., the alkaline insoluble protective layer inhibits the dissolution of novolak resin at the interface between the film and the developer. A new three-component type deep-UV resist has been also developed as an application of the new mechanism. The resist consists of a novolak resin, 5-diazo Meldrum's acid and a new dissolution inhibitors like phenyltosylate and p-phenylene ditosylate, which successfully improve the residual resist thickness.

Paper Details

Date Published: 30 January 1989
PDF: 8 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953017
Show Author Affiliations
Makoto Murata, Japan Synthetic Rubber Co.,Ltd. (Japan)
Mitsunobu Koshiba, Japan Synthetic Rubber Co.,Ltd. (Japan)
Yoshiyuki Harita, Japan Synthetic Rubber Co.,Ltd. (Japan)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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