Non-destructive, rapid optical techniques are particularly amenable to the analysis of semiconductor and device-related materials. This paper briefly considers three particular applications of IR spectroscopy in the routine assessment of electronic materials at the GEC Hirst Research Centre. These include the analysis of impurity levels in silicon, their location and interaction behaviour, the physical and compositional analysis of dielectric glassy films used in planar devices in silicon, and the compositional and thickness mapping of II-VI alloy IR detector materials.

Date Published: 1 May 1986
PDF: 3 pages
Proc. SPIE 0590, Infrared Technology and Applications, (1 May 1986); doi: 10.1117/12.951989

Published in SPIE Proceedings Vol. 0590:
Infrared Technology and Applications
Lionel R. Baker; Andre Masson, Editor(s)