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Proceedings Paper

Short Wavelength AlGaInP Laser Diode Research At Sony
Author(s): T. Mamine; K. Honda; H. Satoh; I. Umezawa; C. Kojima; M. Ikeda; N. Yamamoto; K. Kaneko
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Paper Abstract

Recent research and development work on AlGaInP visible laser diodes by SONY are reviewed. Performance and reliability of a gain-guided 670 nm laser with a tapered geometry are described. Efforts for achieving shorter wavelengths around 650 nm with using (111)B substrates, lower threshold current as well as higher power versions around 10 - 100 mW are also discussed.

Paper Details

Date Published: 25 July 1989
PDF: 8 pages
Proc. SPIE 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing, (25 July 1989); doi: 10.1117/12.951868
Show Author Affiliations
T. Mamine, SONY Atsugi Plant (Japan)
K. Honda, SONY Atsugi Plant (Japan)
H. Satoh, SONY Atsugi Plant (Japan)
I. Umezawa, SONY Atsugi Plant (Japan)
C. Kojima, SONY Atsugi Plant (Japan)
M. Ikeda, SONY Corporation (Japan)
N. Yamamoto, SONY Corporation (Japan)
K. Kaneko, SONY Corporation (Japan)

Published in SPIE Proceedings Vol. 1062:
Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing
Martin M. Sokoloski, Editor(s)

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