The responsivity of narrow gap photo-detectors (e.g CMT) can be increased, and noise processes reduced by the use of minority carrier exclusion in a suitably designed structure. It is found that, while diffusion plays no role within the exclusion region, it is a major factor in determining its size. Experimental data excellently match computer modelled predictions, showing that the reduced electron concentration in an uncooled device leads to significantly improved photoconductor performance.

Date Published: 7 July 1986
PDF: 7 pages
Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986);

Published in SPIE Proceedings Vol. 0588:
Recent Developments in Materials & Detectors for the Infrared
John S. Seeley; John S. Seeley, Editor(s)