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Proceedings Paper

Reactions Of Photogenerated Neutral Free Radicals At Semiconductor Surfaces
Author(s): Jeffrey I. Steinfeld; J A Shorter; J. Langan; Xu Xin
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Paper Abstract

The reactions of fluorocarbon free radicals on silicon and silicon oxide surfaces have been studied by producing the reactive species using laser photodissociation, and examining the resulting surface compositions using in situ electron spectroscopy. The reactivities of these and other fluorinating species can be explained by means of a simple thermochemical model which takes account only of chemical bonds made and broken at the surface of the material. The photochemical processes which take place in surface films directly exposed to laser irradiation remain to be established.

Paper Details

Date Published: 15 August 1989
PDF: 9 pages
Proc. SPIE 1056, Photochemistry in Thin Films, (15 August 1989); doi: 10.1117/12.951633
Show Author Affiliations
Jeffrey I. Steinfeld, Massachusetts Institute of Technology (United States)
J A Shorter, Massachusetts Institute of Technology (United States)
J. Langan, Massachusetts Institute of Technology (United States)
Xu Xin, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1056:
Photochemistry in Thin Films
Thomas F. George, Editor(s)

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