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Proceedings Paper

Gallium Arsenide Waveguide Interferometers And Couplers For High-Speed Electro-Optic Modulation And Switching
Author(s): P. Buchmann; H. Kaufmann; H. Melchior; G. Guekos
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Paper Abstract

The properties of electro-optic waveguide devices in GaAs, such as propagation and coupling loss, reflections, driving requirements, bandwidth, polarization sensitivity and on/off ratio, have to be optimized to allow their application as high-speed modulators in single-mode optical communication links. By using electron beam masks, lift-off and reactive ion etching techniques for the fabrication of rib waveguides in n-/n+ GaAs we have achieved device losses of less than 5 dB for both Mach-Zehnder interferometers and stepped A directional couplers. Reflections from the coupling facets were reduced to less than .5% by SiO antireflection coatings. The driving voltages are between 10 V and 30 V and the modulation/ switching bandwidths exceed 5 GHz. Results of system applications at data rates of more than 500 Mbit/s are reported.

Paper Details

Date Published: 9 July 1986
PDF: 10 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951207
Show Author Affiliations
P. Buchmann, Swiss Federal Institute of Technology (Switzerland)
H. Kaufmann, Swiss Federal Institute of Technology (Switzerland)
H. Melchior, Swiss Federal Institute of Technology (Switzerland)
G. Guekos, Swiss Federal Institute of Technology (Switzerland)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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