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Proceedings Paper

Growth of InAsPSb/InAs Heterostructures
Author(s): J. L. Benchimol; B. Manot; M. Ketata; J. Primot
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Paper Abstract

In(As1-x-yPxSby) is one of the most attractive III-V compound for optical sources with wavelength in the range 2-4µm. Liquid phase epitaxy of this quaternary alloy lattice-matched to InAs substrates was studied. Growth of a high band gap confinement layer, limited by the presence of an immiscibility domain, was optimized from phase diagram calculations. In(AsPSb)/InAs/In(AsPSb) heterostructures, which give the best confinement of the active layer and the longer emission wavelength of this system, were successfully grown.

Paper Details

Date Published: 9 July 1986
PDF: 4 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951201
Show Author Affiliations
J. L. Benchimol, Laboratoire de Bagneux - C.N.E.T. (France)
B. Manot, Laboratoire de Bagneux - C.N.E.T. (France)
M. Ketata, Laboratoire de Bagneux - C.N.E.T. (France)
J. Primot, Laboratoire de Bagneux - C.N.E.T. (France)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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