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Proceedings Paper

III-V Alloys Based On Ga Sb For Optical Communications At 2.0-4.5 µm
Author(s): A. Joullie; F. Jia Hua; F. Karouta; H. Mani; C. Alibert
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Paper Abstract

Low band-gap III-V solid solutions such as GaInAsSb, AlInAsSb and InAsSbP, grown on GaSb or InAs substrates, have potential applications in optoelectronics in the long wavelength range 2.0-4.5 μm. In the first part of this paper a survey of some properties of III-V alloys which can be matched with GaSb is presented. The band-gap energy E0, the spin-orbit splitting Δ0 and the refractive index n of a few GaSb-lattice-matched quaternary systems are calculated as a function of the alloy composition. The use of these solid solutions in light sources and detectors is discussed on the basis of the Auger effect, which can be strong whenever E0 ~ Δ0. In the second part we present our results concerning the LPE growth of the GaInAsSb / GaSb system. Lattice-matched 2.0-2.4 μm and quasi lattice-matched 2.0-2.5 μm quaternary layers could be epitaxied in the temperature range 450-600°C. Double heterostructures using Ga Sb and GaAlAsSb as confining layers, matched with (100) GaSb, were prepared. From the analysis of phase diagram and growth problems, the applications of GaInAsSb / GaSb heterostructures grown by LPE on GaSb appear to be limited to the 1.7-2.4 μm and 4.3-4.7 μm wavelength range.

Paper Details

Date Published: 9 July 1986
PDF: 12 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986);
Show Author Affiliations
A. Joullie, Equipe de Microoptoelectronique de Montpellier (EM2) (France)
F. Jia Hua, Equipe de Microoptoelectronique de Montpellier (EM2) (France)
F. Karouta, Equipe de Microoptoelectronique de Montpellier (EM2) (France)
H. Mani, Equipe de Microoptoelectronique de Montpellier (EM2) (France)
C. Alibert, Equipe de Microoptoelectronique de Montpellier (EM2) (France)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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