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Proceedings Paper

Reactive Ion Etching (RIE) And Magnetron Ion Etching (MIE) Combinations For Opto-Electronic Integrated Circuit (OEIC) Processing
Author(s): M. S. Lebby; P. A. Kiely; G. W. Taylor
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Paper Abstract

There has been a growing interest in the application of low pressure plasma environments to III-V etching techniques. This interest has been generated by the need to etch sub-micron features with better linewidth and resolution than that which can be obtained with wet etching. This paper presents the initial results of combining RIE, the popular technique of etching III-V semiconductors, with MIE, a technique that has found considerable success in silicon processing. The combination of these two types of etchers to the fabrication of OEIC devices has yielded nigh performance electronic and opto-electronic structures. We present results that show initial calibration data taken from the MIE and RIE, and where etches are made by each system during the fabrication sequence. Using the MIE, undercuts in GaAs/A1GaAs have been formed beneath the gate to prevent source/drain shorting from ion implantation. The MIE is also used to define tungsten gates and silicon dioxide mesas in the DOES laser structure. The RIE has been used to define the DOES laser mesa with a photoresist mask. It has also been used with a wet chemical or MIE etch to form undercuts needed for the laser structure. Our goals are (1) to provide an undercut into the HFETs and HFETPDs barrier layer to prevent source/drain to gate shorting from ion implantation and similarly in the BICFET and DOES to prevent source to emitter shorting; (2) to provide a vertical undercut into the main mesa of the DOES laser which will aid in processing and the eventual etching of facets.

Paper Details

Date Published: 15 March 1989
PDF: 9 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951018
Show Author Affiliations
M. S. Lebby, AT&T Bell Laboratories (United States)
P. A. Kiely, AT&T Bell Laboratories (United States)
G. W. Taylor, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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