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Proceedings Paper

Modulation Spectroscopy For In Situ Characterization Of The Growth And Processing Of Semiconductors
Author(s): Fred H. Pollak; H. Shen
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Paper Abstract

This paper reviews some recent developments in the use of contactless modulation spectroscopy techniques for the in-situ characterization of the growth and processing of semiconductors. Photoreflectance (PR) measurements at 600°C on GaAs and Ga0.82A1 0.08As have demonstrated the potential of this method for in-situ monitoring during growth. Investigations PR, electron beam electroreflectance and differential reflectometry have shown that post growth (processing) information can be obtained about very thin Ga1AlxAs/GaAs epitaxial films, Ga Al As alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatched strain, ion-implantation and annealing, and sputtering. In addition, characterization of semiconductor heterostructures can be performed.

Paper Details

Date Published: 15 March 1989
PDF: 8 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951010
Show Author Affiliations
Fred H. Pollak, University of New York (United States)
H. Shen, University of New York (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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