Proceedings PaperMicrostructure And Patterning Of Laser Initiated Oxide Growth
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Microstructural studies of silicon dioxide films grown by laser and by traditional means using infrared spectrometry are described. Broad similarities and intriguing thickness dependences are discussed. A new technique of Direct Growth Lithography (DGL) is reported, whereby oxide patterns are selectively and directly grown over significant regions of a silicon wafer, with spatial features extending over a 3mm square area with linewidths down to around one micron.