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Proceedings Paper

Microstructure And Patterning Of Laser Initiated Oxide Growth
Author(s): Ian W. Boyd
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Paper Abstract

Microstructural studies of silicon dioxide films grown by laser and by traditional means using infrared spectrometry are described. Broad similarities and intriguing thickness dependences are discussed. A new technique of Direct Growth Lithography (DGL) is reported, whereby oxide patterns are selectively and directly grown over significant regions of a silicon wafer, with spatial features extending over a 3mm square area with linewidths down to around one micron.

Paper Details

Date Published: 18 May 1989
PDF: 11 pages
Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); doi: 10.1117/12.950621
Show Author Affiliations
Ian W. Boyd, University College London (UK)

Published in SPIE Proceedings Vol. 1033:
Trends in Quantum Electronics
Ioan Ursu, Editor(s)

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