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Proceedings Paper

Quenching And Luminescence Efficiency Of Nd[sup]3+[/sup] In YAG
Author(s): V. Lupei; A. Lupei; S, Georgescu; C. Ionescu; W. M. Yen
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Paper Abstract

The effect of the concentration luminescence quenching of the 4F 3/2, level of Nd3+ in YAG on the relative efficiency is presented. Based on the analysis of the decay curves in terms of the energy transfer theory, an analytical expression for the relative luminescence efficiency is obtained. In the low concentration range (up to q,1.5 at % Nd3+), the efficiency linearly decreases when Nd3+ concentration increases. It is also stressed that pairs quenching contribute about 20 % to the nonradiative energy transfer losses. Quantum efficiency of luminescence is an important parameter for the characterization of laser active media; its lowering is due to either multiphonon relaxation or energy transfer processes. The multiphonon non-radiative probability depends on the energy gap between levels, on the phonon energy and temperature; usually at low activator doping it is practically independent on concentration. On the other hand, energy transfer losses show a marked dependence on activator concentration, a fact that severely limits the range of useful con-centration of active centers in some laser crystals. In the YAG:Nd case the minimum energy gap between the Stark components of the 4F,I.) and the next lower level 4F15/2 is of about 4700 cm-1. Since in YAG tree phonons most effdbtively coupled to the Rare ions have an energy of 1, 700 cm-1, the probability for multiphonon relaxation from the 'F3/, level, even at room temperature, is very low and therefore for low Nd 3+ concentrations quantum efficiency is expected to be close to 1.

Paper Details

Date Published: 18 May 1989
PDF: 4 pages
Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); doi: 10.1117/12.950603
Show Author Affiliations
V. Lupei, Central Institute of Physics (Romania)
A. Lupei, Central Institute of Physics (Romania)
S, Georgescu, Central Institute of Physics (Romania)
C. Ionescu, Central Institute of Physics (Romania)
W. M. Yen, University of Georgia (United States)

Published in SPIE Proceedings Vol. 1033:
Trends in Quantum Electronics
Ioan Ursu, Editor(s)

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