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Proceedings Paper

Deposition Of Single Crystalline Silicon Films Using Excimer Laser
Author(s): Masataka Murahara; Koichi Toyoda
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Paper Abstract

Photolytic processing is especially attractive for semiconductor device fabrications at low temperature. Specially excimer laser chemical vapor deposition are expected method for selective deposition of the semiconductor films. We report here the formation of single crystalline silicon films were grown on the polycrystalline silicon substrate at 450°C substrate temperature using an ArF excimer laser. Laser beams were irradiated simultaneously parallel and perpendicular to the substrate. The focused parallel beam induced two photon decomposition of SiH4 near the surface of a substrate to produce radicals. Amorphous silicon films were deposited by parallel irradiation only, and poly or single crystalline silicon films were grown with the additional perpendicular irradiation. Crystallinity was confirmed by measurements of refraction index, optical band gap, infrared absorption, electron diffraction and X-ray diffraction.

Paper Details

Date Published: 20 June 1989
PDF: 4 pages
Proc. SPIE 1031, 7th Intl Symp on Gas Flow and Chemical Lasers, (20 June 1989); doi: 10.1117/12.950584
Show Author Affiliations
Masataka Murahara, Tokai University (Japan)
Koichi Toyoda, Riken (Japan)

Published in SPIE Proceedings Vol. 1031:
7th Intl Symp on Gas Flow and Chemical Lasers
Dieter Schuoecker, Editor(s)

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