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Proceedings Paper

The Operation Of A Semiconductor Preionised DF Laser
Author(s): E. K. Gorton; P. H. Cross; E. W. Parcell
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Paper Abstract

A semiconductor preionised pulsed chemical DF laser is operated using SF6 and D2 as fuels. The technique results in uniform, stable and high energy density discharges and provides output energies and peak powers of 40 mJ and 1.2 MW from 20 cc active volume. Discharge measurements are correlated with the output characteristics of the laser to show that the important excitation parameter is the total charge passed by the discharge. A fluorine production rate coefficient is estimated to be 3.67 x 10-9 cm /s and this is shown to be consistent with a dominant role for fluorine production by ionisation of SF6 in the discharge.

Paper Details

Date Published: 20 June 1989
PDF: 6 pages
Proc. SPIE 1031, 7th Intl Symp on Gas Flow and Chemical Lasers, (20 June 1989); doi: 10.1117/12.950530
Show Author Affiliations
E. K. Gorton, Royal Signals and Radar Establishment (UK)
P. H. Cross, Royal Signals and Radar Establishment (UK)
E. W. Parcell, Royal Signals and Radar Establishment (UK)

Published in SPIE Proceedings Vol. 1031:
7th Intl Symp on Gas Flow and Chemical Lasers
Dieter Schuoecker, Editor(s)

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