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Proceedings Paper

Infrared Laser Scan Microscope
Author(s): Eberhard Ziegler; Hans Peter Feuerbaum
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Paper Abstract

The infrared laser scan microscope is especially suitable for applications in material science and in the semiconductor industry. The infrared laser beam is deflected in x and y directions by a mirror system and the scanning beam is focussed with the help of a light microscope onto the sample. Four different IR (infrared) lasers can be used; the semiconductor lasers AlGaAs/GaAs with a wavelength of about 820nm and GaInAsP/InP with a wavelength of about 1.3μm and the helium-neon-lasers emitting at 1.152μm and 1.523pμm. The lasers are situated outside the optics and are connected by a special monomode glass fiber. The He-Ne laser, with a wavelength of 1.152μm, is of special significance in the investigation of silicon and ICs because its wavelength exactly corresponds to the energy gap of silicon at room temperature ( 1.07eV ). It is therefore possible to image silicon at different depths, to test devices from the back and, moreover, to produce an OBIC ( Optical Beam Induced Current ) signal from the back of the device.

Paper Details

Date Published: 9 February 1989
PDF: 5 pages
Proc. SPIE 1028, Scanning Imaging, (9 February 1989); doi: 10.1117/12.950349
Show Author Affiliations
Eberhard Ziegler, ICT GmbH Klausnerring (Germany)
Hans Peter Feuerbaum, ICT GmbH Klausnerring (Germany)

Published in SPIE Proceedings Vol. 1028:
Scanning Imaging
Tony Wilson, Editor(s)

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