Proceedings Paper
Photoluminescence And Optical Beam Induced Current Imaging Of Defects| Format | Member Price | Non-Member Price |
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Paper Abstract
The minority carrier distribution in a semi-infinite semiconductor due to light focussed onto the surface via a high numerical aperture lens is given. The contrast obtained in both Photoluminescence and Optical Beam Induced Current defect imaging is derived as a function of the illuminating lens numerical aperture. It is shown that the maximum resolution attainable in both techniques is comparable.
Paper Details
Date Published: 9 February 1989
PDF: 6 pages
Proc. SPIE 1028, Scanning Imaging, (9 February 1989); doi: 10.1117/12.950342
Published in SPIE Proceedings Vol. 1028:
Scanning Imaging
Tony Wilson, Editor(s)
PDF: 6 pages
Proc. SPIE 1028, Scanning Imaging, (9 February 1989); doi: 10.1117/12.950342
Show Author Affiliations
P. D. Pester, Oxford University (England)
T. Wilson, Oxford University (England)
Published in SPIE Proceedings Vol. 1028:
Scanning Imaging
Tony Wilson, Editor(s)
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