Proceedings Paper
Backside Charging Of The CCD| Format | Member Price | Non-Member Price |
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Paper Abstract
Until recently, the usefulness of the charge coupled device (CCD) as an imaging sensor was thought to be restricted to within rather narrow boundaries of the visible and near IR spectrum. However, since the discovery of backside charging the full potential of CCD performance is now realized. Indeed, the technique of backside charging not only allows the CCD to be used directly in the UV, EUV, and soft X-ray regimes, it has opened up new opportunities in optimizing charge collection processes as well. In this paper, we discuss in considerable detail the technique of backside charging, describing its properties, use, and potential in the future as it applies to the CCD.
Paper Details
Date Published: 11 December 1985
PDF: 36 pages
Proc. SPIE 0570, Solid-State Imaging Arrays, (11 December 1985); doi: 10.1117/12.950308
Published in SPIE Proceedings Vol. 0570:
Solid-State Imaging Arrays
Eustace L. Dereniak; Keith N. Prettyjohns, Editor(s)
PDF: 36 pages
Proc. SPIE 0570, Solid-State Imaging Arrays, (11 December 1985); doi: 10.1117/12.950308
Show Author Affiliations
James Janesick, California Institute of Technology (United States)
Tom Elliott, California Institute of Technology (United States)
Tom Elliott, California Institute of Technology (United States)
Taher Daud, California Institute of Technology (United States)
Jim McCarthy, California Institute of Technology (United States)
Jim McCarthy, California Institute of Technology (United States)
Published in SPIE Proceedings Vol. 0570:
Solid-State Imaging Arrays
Eustace L. Dereniak; Keith N. Prettyjohns, Editor(s)
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