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Proceedings Paper

Numerical Analysis Of Transverse Mode Competition In Ridge Waveguide Semiconductor Lasers
Author(s): Ivan A. Maio
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Paper Abstract

The competition between two transverse lasing modes in ridp waveguide semiconductor lasers has been studied through a numerical model expressly developed. The model allows for spatial Me burning and its influence on the field shape. The numerical simulations have been executed employing theparamstets of InGaAsP-InP devices andvuying the cladding thickness in the interval where the field confinement changes from to gain guiding. Information on the of spatial hole burning on device efficiency, mode competition and polarization bistabifity has been obtained.

Paper Details

Date Published: 5 April 1989
PDF: 4 pages
Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950213
Show Author Affiliations
Ivan A. Maio, Politecnico di Torino (Italy)

Published in SPIE Proceedings Vol. 1025:
Semiconductor Lasers
Gerard A. Acket, Editor(s)

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