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Proceedings Paper

Experimental Comparison Of Planar Buried-Ridge-Structure (PBRS) Laser Diodes With Bridge-Contacted PBRS Laser Diodes
Author(s): Wolfgang Thulke; Anton Zach
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Paper Abstract

The influence of the large-area forward-biased p-n homojunctions at both sides of the active stripe on the performance of PBRS laser diodes has been investigated. For that purpose, the Bridge-Contacted (BC) PBRS has been created, within which the area of these junctions is significantly reduced without changing the fundamental features of the fabrication process and the structure geometry. The comparison of both structures originating from the same wafer on an n-type substrate shows that the forward-biased junctions do not severely affect the PBRS laser performance. On p-type substrates, however, bridge-contacting is expected to improve considerably the current confinement.

Paper Details

Date Published: 5 April 1989
PDF: 5 pages
Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950197
Show Author Affiliations
Wolfgang Thulke, Siemens Research Laboratories (Germany)
Anton Zach, Siemens Research Laboratories (Germany)

Published in SPIE Proceedings Vol. 1025:
Semiconductor Lasers
Gerard A. Acket, Editor(s)

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