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Proceedings Paper

Ridge Waveguidc DFB Laser Operating At = 1.5 µm Fabricated In A Single Step Epitaxial Growth
Author(s): Luuk F. Tiemeyer; Hans J. Binsma; Harry A. van Zantvoort; Ingrid A. Baele; Teus van Dongen; Geert L. van der Hofstad
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Paper Abstract

Ridge Waveguide MB lasers were fabricated by I.PF over-growth of a first order grating in the InP substrate with a sequence of planar layers consisting of a λ = 1.3 μm InGaAsP guiding layer, a A = 1.5 pm InGaAsP active layer, a λ = 1.3 μm InGaAsP guiding layer, an InP layer and an InGaAsP contact layer. Excellent control of layer thickness was obtained using a special LPE boat allowing the overgrowth of several wafers from the same set of mothermelts. The lasers obtained after etching of a 3.5 μm wide ridge, deposition of SiO2 isolation, metallization and mounting, show threshold currents of 35 mΛ and efficiencies of 18% at 20 C. Selected devices showed single longitudinal mode operation with a sideband suppression better then 30 dB for powers up to 10 mW. Spectra recorded near threshold show a clear stopband which compares very well in width to devices with the grating located above the active layer. The Ridge Waveguide DFB laser fabricated in a single epitaxial step is a very promising structure for making opto-electronic integrated devices in a relatively simple way.

Paper Details

Date Published: 5 April 1989
PDF: 5 pages
Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950193
Show Author Affiliations
Luuk F. Tiemeyer, Philips Research Laboratories (Netherlands)
Hans J. Binsma, Philips Research Laboratories (Netherlands)
Harry A. van Zantvoort, Philips Research Laboratories (Netherlands)
Ingrid A. Baele, Philips Research Laboratories (Netherlands)
Teus van Dongen, Philips Research Laboratories (Netherlands)
Geert L. van der Hofstad, Philips Research Laboratories (Netherlands)

Published in SPIE Proceedings Vol. 1025:
Semiconductor Lasers
Gerard A. Acket, Editor(s)

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