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Proceedings Paper

Picosecond NOR Gates Using II-VI And III-V Bulk Semiconductors
Author(s): M. Pugnet; J. H. Collet
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Paper Abstract

Picosecond NOR gates using II-VI and III-V bulk semiconductors are described, based on the induced picosecond absorption by the electron-hole plasma. The realization of cascadable devices is discussed.

Paper Details

Date Published: 8 March 1989
PDF: 7 pages
Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); doi: 10.1117/12.949958
Show Author Affiliations
M. Pugnet, Laboratoire de Physique des Solides, associe au CNRS (France)
J. H. Collet, Laboratoire de Physique des Solides, associe au CNRS (France)

Published in SPIE Proceedings Vol. 1017:
Nonlinear Optical Materials
Gerald Roosen, Editor(s)

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