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Proceedings Paper

Analysis of Defects in Single Level Conducting Films
Author(s): R. R. Allen; T. A. Brunner; R. P. Bane
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Paper Abstract

The defect density of the metal layers in a double level metal process was studied. The dominant failure mode, with positive photoresist, was found to be intra-level metal shorts caused by particulate contamination. The major particle source was found to be deposited oxides used as dielectrics. Our processing environment, metal deposition process and lithography process were found to be relatively minor contributors.

Paper Details

Date Published: 2 January 1986
PDF: 9 pages
Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949742
Show Author Affiliations
R. R. Allen, Xerox Corp. (United States)
T. A. Brunner, Xerox Corp. (United States)
R. P. Bane, Prometrix Corp. (United States)

Published in SPIE Proceedings Vol. 0565:
Micron and Submicron Integrated Circuit Metrology
Kevin M. Monahan, Editor(s)

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