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Proceedings Paper

Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography
Author(s): John M. Zeigler; Larry A. Harrah; A.Wayne Johnson
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Paper Abstract

A new class of alkyl silane copolymers with relatively facile self-developing behavior under deep UV exposure has been examined. These materials can reproduce 0.8 μ features by projection lithography with a KrF excimer light source. The mechanism of material removal is primarily photochemical in nature and yields chemically inert volatile siloxanes as the major photoproducts, via a high quantum yield silylene expulsion/oxidation process.

Paper Details

Date Published: 18 April 1985
PDF: 9 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947830
Show Author Affiliations
John M. Zeigler, Sandia National Laboratories (United States)
Larry A. Harrah, Sandia National Laboratories (United States)
A.Wayne Johnson, Sandia National Laboratories (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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