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Proceedings Paper

Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System
Author(s): John A. Underhill; Van Son Nguyen; Michael Kerbaugh; Dianne Sundling
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Paper Abstract

A plasma-enhanced chemically vapor deposited (PECVD) silicon oxynitride (Si-O-N) was used in a 3-layer resist system in combination with a 0.42 na lens to provide device process developers with a means for extending photolithography down to 0.5 pm feature size. This delayed the need for using more expensive lithography alternatives. In this paper, the procedures used for forming the 3-layer structure are outlined. Typical plasma deposition conditions are cited. Results from the comparison among Si-N-0 films of differing composition are described in terms of refractive index, stress, and pinhole densities for varying ratios of S:N:O. Etch rates and their ratios pertinent to transferring the image into base resist are reported. Lift-off profiles were obtained and a pol*mide was used for a base which remains soluble in common solvents after being baked at 200oC. Scanning electron micrographs (SEMs) of sub-micron image profiles are shown and linewidth measurement data are presented to show linewidth precision and constant bias into the 0.7 μm range. The latter demonstrates the adequacy of this technique for sub-micron device development.

Paper Details

Date Published: 18 April 1985
PDF: 7 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947819
Show Author Affiliations
John A. Underhill, IBM General Technology Division (United States)
Van Son Nguyen, IBM General Technology Division (United States)
Michael Kerbaugh, IBM General Technology Division (United States)
Dianne Sundling, IBM General Technology Division (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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