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Proceedings Paper

Optical Density And Contrast Of Positive Photoresists
Author(s): S. V. Babu; V. Srinivasan
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Paper Abstract

We derive a general relation that exhibits the interdependence of the exposure and development processes in determining the contrast and the sensitivity curve of any photo-resist. We show,that for several limiting cases, the contrast is given by the reciprocal of the (pre-or post-expose) optical density of the resist, in agreement with the measured contrasts for PR102, AZ2400 and Dupont 2041 Elvacite PMMA resists. We also calculate the dependence of the threshold exposure energy D/35, and the dose Dp required to completely develop the resist, and hence, the contrast, on development time for a hypothetical solvent and simulate the results obtained using MF314 developer.

Paper Details

Date Published: 18 April 1985
PDF: 8 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947812
Show Author Affiliations
S. V. Babu, Clarkson University (United States)
V. Srinivasan, Clarkson University (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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