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Proceedings Paper

Process Latitude Modeling For Submicron G- And I-Line Lithography
Author(s): K. M. Monahan; D. A. Bernard; M. Blanco
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Paper Abstract

We have evaluated both present and future G-- and I--line lenses by considering their process sensitivity in 0.9-micron lithography. This was accomplished using a modified and automated version of the U. C. Berkeley simulation program SAMPLE. Our results indicate that resist development latitudes are much more sensitive indicators of lens performance than sidewall angle and thickness contrast. When properly defined, they are also relatively insensitive to standing wave effects. Using a single layer of the AZ1350J 6-line resist for all our comparisons, we find the 0.38 numerical aperture 6-line and the 0.42 I-line lenses give superior latitudes. The 0.28 6-line lense provides inadequate development latitudes for reliable submicron patterning. Details regarding opening latitude, base latitude, top latitude, metrology ratio, sidewall angle, thickness contrast, and exposure dose in response to variations in numerical aperture, wavelength, base nodality, and top nodality are presented.

Paper Details

Date Published: 23 July 1985
PDF: 12 pages
Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947768
Show Author Affiliations
K. M. Monahan, Signetics Corporation (United States)
D. A. Bernard, Signetics Corporation (United States)
M. Blanco, Signetics Corporation (United States)

Published in SPIE Proceedings Vol. 0538:
Optical Microlithography IV
Harry L. Stover, Editor(s)

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