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Proceedings Paper

Laser Based Critical Dimension Measurement System For Semiconductor Production
Author(s): William G. Divens; William Bates Cole Jr.
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Paper Abstract

A laser based linewidth measurement system has been developed for measurement of critical dimensions on semiconductor wafers. The system meets both the accuracy and throughput requirements for micron and submicron semiconductor production requirements.

Paper Details

Date Published: 23 July 1985
PDF: 7 pages
Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947765
Show Author Affiliations
William G. Divens, Optoscan Corporation (United States)
William Bates Cole Jr., Optoscan Corporation (United States)

Published in SPIE Proceedings Vol. 0538:
Optical Microlithography IV
Harry L. Stover, Editor(s)

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