Share Email Print

Proceedings Paper

Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation
Author(s): S. K. Sargood; J. Haigh; M. J. Robertson; A. S. M. Ali
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Mesa PIN structures have been fabricated in the material system In(As,Sb,P) from layers grown by liquid-phase epitaxy lattice-matched to InAs substrates. The electrical performance of the structures shows their suitability as photodetectors at 2.56õm in optical communications.

Paper Details

Date Published: 21 September 1988
PDF: 3 pages
Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); doi: 10.1117/12.947517
Show Author Affiliations
S. K. Sargood, British Telecom Research Laboratories (UK)
J. Haigh, British Telecom Research Laboratories (UK)
M. J. Robertson, British Telecom Research Laboratories (UK)
A. S. M. Ali, British Telecom Research Laboratories (UK)

Published in SPIE Proceedings Vol. 0949:
Fibre Optics '88
Lionel R. Baker, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?