Proceedings Paper
Fabrication Of InAsSbP PIN Detectors For 2.56µm Wavelength Operation| Format | Member Price | Non-Member Price |
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Paper Abstract
Mesa PIN structures have been fabricated in the material system In(As,Sb,P) from layers grown by liquid-phase epitaxy lattice-matched to InAs substrates. The electrical performance of the structures shows their suitability as photodetectors at 2.56õm in optical communications.
Paper Details
Date Published: 21 September 1988
PDF: 3 pages
Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); doi: 10.1117/12.947517
Published in SPIE Proceedings Vol. 0949:
Fibre Optics '88
Lionel R. Baker, Editor(s)
PDF: 3 pages
Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); doi: 10.1117/12.947517
Show Author Affiliations
S. K. Sargood, British Telecom Research Laboratories (UK)
J. Haigh, British Telecom Research Laboratories (UK)
J. Haigh, British Telecom Research Laboratories (UK)
M. J. Robertson, British Telecom Research Laboratories (UK)
A. S. M. Ali, British Telecom Research Laboratories (UK)
A. S. M. Ali, British Telecom Research Laboratories (UK)
Published in SPIE Proceedings Vol. 0949:
Fibre Optics '88
Lionel R. Baker, Editor(s)
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