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Proceedings Paper

The Potential Of Optical Lithography
Author(s): Makoto Nakase
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Paper Abstract

The limits of submicron patterning by optical lithography were estimated by computer simulation. As a result, the optimum numerical aperture, NA, which gives the highest resolution was determined. Assuming that the permitted defocus value is +1 pm, the lithographic resolution of about 0.7 pm was obtained with NA 0.5 and near-UV exposure. A 0.5-μm resolution was obtained with NA:0.35 and deep-UV exposure. In addition, less than 0.5-μm resolution was suggested using resist system technologies and optical exposure tools that optimize NA as well as the exposure wavelength. Furthermore, it is shown that the goal of half micron resolution will be industrially achieved before the end of 1980's by optical lithography rather than by electron-beam lithography.

Paper Details

Date Published: 20 June 1985
PDF: 8 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947497
Show Author Affiliations
Makoto Nakase, Toshiba Corporation (Japan)

Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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