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Proceedings Paper

Nonlinear Optoelectronic Effects In Ultrafast Photoconductive Switches
Author(s): Duane D. Smith; John F. Knudsen; Steven C. Moss
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Paper Abstract

Ultrafast photoconductive switches have been used to generate electrical waveforms and to sample both electrical and optical waveforms. Widespread use of these switches is anticipated in conjunction with optical interconnects. We present results of an investigation into the electrical bias dependence and optical intensity dependence of the responsivity of photoconductive switches. The switches were fabricated using standard 50 0 microstrip transmission line technology on silicon-on-sapphire wafers. Ultrafast photoconductive response was produced by ion-implanting the silicon to reduce the carrier lifetime. We find that the performance of the switches is critically dependent upon wafer fabrication and ion-implantation conditions. While all of the switches tested possessed picosecond-scale response, the linearity of response with electrical bias and optical intensity was dependent on the order of the metalization and ion-implantation processing steps. In contrast to reports in the literature, fabrication processes which were expected to yield switches with ohmic contacts instead yielded switches with nonlinear response. We discuss the contributions of nonlinear absorption, carrier transport, charge screening and the build-up of space charge as well as other geometrical effects.

Paper Details

Date Published: 8 September 1988
PDF: 16 pages
Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); doi: 10.1117/12.947460
Show Author Affiliations
Duane D. Smith, The Aerospace Corporation (United States)
John F. Knudsen, The Aerospace Corporation (United States)
Steven C. Moss, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0947:
Interconnection of High Speed and High Frequency Devices and Systems
Alfred P. DeFonzo, Editor(s)

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