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Proceedings Paper

Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method
Author(s): Tapan K. Gupta
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Paper Abstract

Effective bandgap shrinkage due to the presence of a thin p+ diffused region on a unif-ormly doped n-type silicon constituting a p+n junction solar cell is measured by electro-lyte electro-reflectance spectroscopic method and reported here. Results show two prominent features in two bands (a) in the vicinity of indirect gap around 1.2 eV and (b) in the region above 3.2 eV. The peaks were found to shift with doping density in the p+ region. The observed shift was ~22 eV between two samples of doping densities 1018 and 1020 cm-3 in the p+ region.

Paper Details

Date Published: 9 August 1988
PDF: 8 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947415
Show Author Affiliations
Tapan K. Gupta, Tufts University (United States)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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