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Proceedings Paper

Impurity Phase Transitions In Silicon Emitter Junctions
Author(s): Gert I. Andersson; Olof Engstrom
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Paper Abstract

A new type of defect occurring in n++p+-junctions prepared by the diffusion of high concentrations of phosphorus and gallium into neutron transmutation doped (111)-silicon is reported. The defect is identified as a complex of a metal precipitate interacting with a Shockley-Read type of generation centre and has a strong influence on the recombination and generation properties of emitter structures. Instabilities in the generation current, occurring at well defined temperatures and influenced by the electric field, are interpreted as structural or phase changes among the defects. The concentration of the defects is dependent on the concentration of gallium.

Paper Details

Date Published: 16 August 1988
PDF: 4 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947404
Show Author Affiliations
Gert I. Andersson, Chalmers University of Technology (Sweden)
Olof Engstrom, Chalmers University of Technology (Sweden)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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