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Proceedings Paper

Characterization Of Isolated Silicon Epitaxy Material
Author(s): L. T. P. Allen; M. W. Batty; W. R. Henderson; T. E. Jersey; D. P. Vu; P. M. Zavracky; J. Narayan
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Paper Abstract

An advanced technique of Isolated Silicon Epitaxy (ISE) has been used to produce silicon-on-insulator (SOI) material of high quality. AUGER spectroscopy of ISE shows a chemically clean film with no heavy metal contamination. Structural studies by transmission electron microscopy and Nomarski optical microscopy on ISE SOI show only isolated threading dislocations yielding defect densities of (~3 X 105/cm2). Double crystal x-ray diffraction shows a FWHM of 44 arcsec in the isolated Si film. Material quality is discussed in detail.

Paper Details

Date Published: 16 August 1988
PDF: 5 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947400
Show Author Affiliations
L. T. P. Allen, Kopin Corporation (United States)
M. W. Batty, Kopin Corporation (United States)
W. R. Henderson, Kopin Corporation (United States)
T. E. Jersey, Kopin Corporation (United States)
D. P. Vu, Kopin Corporation (United States)
P. M. Zavracky, Kopin Corporation (United States)
J. Narayan, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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