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Proceedings Paper

Processing & Characterization Of Thin Films Of SiO[sub]2[/sub] On Si For Integrated Circuits
Author(s): N. M. Ravindra; W. N. Carr; O. L. Russo; D. Fathy; A. R. Heyd; K. Vedam; J. Narayan
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Paper Abstract

Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER SE spectra.

Paper Details

Date Published: 16 August 1988
PDF: 13 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988);
Show Author Affiliations
N. M. Ravindra, New Jersey Institute of Technology (United States)
W. N. Carr, New Jersey Institute of Technology (United States)
O. L. Russo, New Jersey Institute of Technology (United States)
D. Fathy, Oak Ridge National Laboratory (United States)
A. R. Heyd, Pennsylvania State University (United States)
K. Vedam, Pennsylvania State University (United States)
J. Narayan, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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