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Proceedings Paper

Synthesis Of The Multialkali Photocathodes By Molecular Beam Epitaxy
Author(s): V. V. Balanyuk; A. S. Chernikov; V. F. Krasnov; S. L. Musher; V. E. Ryabchenko; A. M. Prokhorov; I. A. Dubovoi; V. K. Ushakov; M. Ya. Schelev
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Paper Abstract

A compeletely new technique of growing (Na,K)3Sb multialkali photocathodes in the high vacuum facilities of the molecular beam epitaxy (MBE) is developed. The main principle of semiconductor technology is used: all sources are operated simultaneously and the vapour concentration of Na and K is well above of the stoichiometric one. The intensity flux control is provided with the help of a specia.11y designed quadrupole masspectrometer as well as with the original procedure of atomic beams tomography. Fast baked effusion cells having low heat intertia have been designed. The photocathodes synthesis is provided onto monocrystalline sapphire substrates, on which the contact tungsten ring is eveporated. The choice of tungsten is determined by its small vapourization during the course of the substrate high temperature (1300°K) processing. It is important to note that the total cycle of the photocathode growing process does not exceed 15-20 minutes for the photocathode thickness of about 1000 Å. We have studied the influence of the substrate temperature on photoemission parameters. Quantum efficiency of the MBE grown photocathodes approaches to ten-forty percents at blue sensitivity edge. A qualitative emission theory of the MBE grown photocathodes is suggested.

Paper Details

Date Published: 16 August 1988
PDF: 4 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947393
Show Author Affiliations
V. V. Balanyuk, USSR Academy of Sciences (USSR)
A. S. Chernikov, USSR Academy of Sciences (USSR)
V. F. Krasnov, USSR Academy of Sciences (USSR)
S. L. Musher, USSR Academy of Sciences (USSR)
V. E. Ryabchenko, USSR Academy of Sciences (USSR)
A. M. Prokhorov, USSR Academy of Sciences (USSR)
I. A. Dubovoi, USSR Academy of Sciences (USSR)
V. K. Ushakov, USSR Academy of Sciences (USSR)
M. Ya. Schelev, USSR Academy of Sciences (USSR)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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