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Proceedings Paper

Growth Of Compound Semiconductor By Atomic Layer Epitaxy And Applications
Author(s): Salah M. Bedair
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Paper Abstract

Atomic layer epitaxy is a new growth which proceeds by the alternate deposition of column III and column V species. The deposition is self-limiting, and only one monolayer is deposited per growth cycle independent of the column III or V fluxes. This technique is thus able to achieve better control of layer thickness and uniformity, abrupt interfaces, ordered structure, planer doping, low temperature growth and others. The potential application of atomic layer epitaxy will be reviewed.

Paper Details

Date Published: 16 August 1988
PDF: 2 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947389
Show Author Affiliations
Salah M. Bedair, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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